Year |
Citation |
Score |
2020 |
Smith B, Fleming G, Parrish KD, Wen F, Fleming E, Jarvis K, Tutuc E, McGaughey AJH, Shi L. Mean Free Path Suppression of Low-Frequency Phonons in SiGe Nanowires. Nano Letters. PMID 33054227 DOI: 10.1021/acs.nanolett.0c03590 |
0.506 |
|
2019 |
Wen F, Shabani J, Tutuc E. Josephson Junction Field-Effect Transistors for Boolean Logic Cryogenic Applications Ieee Transactions On Electron Devices. 66: 5367-5374. DOI: 10.1109/Ted.2019.2951634 |
0.52 |
|
2018 |
Wen F, Tutuc E. Strained SixGe1−x-Ge-Si core-double-shell nanowire heterostructures for simultaneous hole and electron mobility enhancement Applied Physics Letters. 113: 113102. DOI: 10.1063/1.5047212 |
0.697 |
|
2017 |
Wen F, Tutuc E. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-x Nanowires. Nano Letters. PMID 29185763 DOI: 10.1021/Acs.Nanolett.7B03450 |
0.713 |
|
2017 |
Hsu W, Wen F, Wang X, Wang Y, Dolocan A, Roy A, Kim T, Tutuc E, Banerjee SK. Laser Spike Annealing for Shallow Junctions in Ge CMOS Ieee Transactions On Electron Devices. 64: 346-352. DOI: 10.1109/Ted.2016.2635625 |
0.56 |
|
2017 |
Wen F, Dillen DC, Kim K, Tutuc E. Shell morphology and Raman spectra of epitaxial Ge−SixGe1−x and Si−SixGe1−x core-shell nanowires Journal of Applied Physics. 121: 234302. DOI: 10.1063/1.4985616 |
0.645 |
|
2016 |
Hsu W, Wang X, Wen F, Wang Y, Dolocan A, Kim T, Tutuc E, Banerjee SK. High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing Ieee Electron Device Letters. 37: 1088-1091. DOI: 10.1109/Led.2016.2587829 |
0.539 |
|
2015 |
Dillen D, Wen F, Kim K, Tutuc E. Coherently strained Si-SixGe1-x core-shell nanowire heterostructures. Nano Letters. PMID 26606651 DOI: 10.1021/Acs.Nanolett.5B03961 |
0.652 |
|
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