Neil Goldsman

Affiliations: 
Electrical and Computer Engineering University of Maryland, College Park, College Park, MD 
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"Neil Goldsman"
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Habersat DB, Goldsman N, Lelis AJ. (2015) Simulating the influence of mobile ionic oxide charge on SiC MOS Bias-temperature instability measurements Materials Science Forum. 821: 697-700
Dilli Z, Akturk A, Goldsman N, et al. (2015) An enhanced specialized SiC power MOSFET simulation system International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 463-466
Xiao Z, Goldsman N, Dhar NK. (2015) Simulation of Indirect-Direct transformation phenomenon of germanium under uniaxial and biaxial strain along arbitrary orientations International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 397-400
Darmody C, Ettisserry DP, Goldsman N, et al. (2015) Using density functional theory to engineer direct gap germanium-tin alloy International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 329-332
Ettisserry DP, Goldsman N, Akturk A, et al. (2015) Modeling of oxygen-vacancy hole trap activation in 4H-SiC MOSFETs using density functional theory and rate equation analysis International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 48-51
Ettisserry DP, Goldsman N, Akturk A, et al. (2015) Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 118
Akturk A, Goldsman N, Potbhare S. (2014) Electro-thermal simulation of silicon carbide power modules International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 237-240
Ettisserry DP, Goldsman N, Akturk A, et al. (2014) Effects of carbon-related oxide defects on the reliability of 4H-SiC MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 61-64
Ettisserry DP, Goldsman N, Akturk A, et al. (2014) Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces Journal of Applied Physics. 116
Ettisserry DP, Goldsman N, Lelis A. (2014) A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 115
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