Parents

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John G. Linvill grad student 1956 Stanford
 (The Design of Alignable Transistor Amplifiers)

Children

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Douglas James Hamilton grad student 1959 Stanford
John C. Bean grad student 1976 Stanford
Dinkar V. Singh grad student 2001 Stanford
Brian J. Greene grad student 2003 Stanford
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Publications

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Gibbons JF. (2000) The Relationship between Stanford and Silicon Valley: a Dean's Perspective The Japan Society of Applied Physics. 2000: 2
Greene BJ, Valentino J, Hoyt JL, et al. (2000) Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium Mrs Proceedings. 609
Rim K, Hoyt JL, Gibbons JF. (1998) Enhanced-Mobility Deep Submicron Strained-Si n-MOSFETs The Japan Society of Applied Physics. 1998: 92-93
Hoyt JL, Rim K, Mitchell TO, et al. (1998) Strain Engineering of Silicon-Based Heterostructures : Materials and Devices The Japan Society of Applied Physics. 1998: 78-79
Takagi S, Hoyt JL, Welser JJ, et al. (1996) Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors Journal of Applied Physics. 80: 1567-1577
Rim K, Takagi S, Welser JJ, et al. (1995) Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors Mrs Proceedings. 379: 327
Welser J, Hoyt JL, Gibbons JF. (1994) Growth and Processing of Relaxed-Si1-xGex/Strained-Si Structures for Metal-Oxide Semiconductor Applications. Japanese Journal of Applied Physics. 33: 2419-2422
Emerson RM, Hoyt JL, Gibbons JF. (1994) Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium Applied Physics Letters. 65: 1103-1105
Welser J, Hoyt JL, Gibbons JF. (1993) Growth and Processing of Relaxed Si1-xGex/Strained Si Structures for MOS Applications The Japan Society of Applied Physics
Reynolds S, Vook DW, Gibbons JF. (1987) Limited Reaction Processing: Growth of III-V Epitaxial Layers by Rapid Thermal Metalorganic Chemical Vapor Deposition Mrs Proceedings. 92
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