Atsushi Kawamoto, Ph.D.

2001

Robert W. Dutton	grad student	2001	Stanford
(Atomic scale modeling of silicate interface properties for high-k gate dielectric applications.)

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Haverty M, Kawamoto A, Cho K, et al. (2002) First-principles study of transition-metal aluminates as high-k gate dielectrics Applied Physics Letters. 80: 2669-2671
Haverty M, Kawamoto A, Jun G, et al. (2001) Preliminary first principles study of Hf and Zr aluminates as replacement high-k dielectrics Mrs Proceedings. 670
Kawamoto A, Jameson J, Griffin P, et al. (2001) Atomic scale effects of zirconium and hafnium incorporation at a model silicon/silicate interface by first principles calculations Ieee Electron Device Letters. 22: 14-16
Kawamoto A, Cho K, Griffin P, et al. (2001) First principles investigation of scaling trends of zirconium silicate interface band offsets Journal of Applied Physics. 90: 1333-1341
Kawamoto A, Cho K, Dutton R. (2001) Perspective paper: First principles modeling of high-k gate dielectrics Journal of Computer-Aided Materials Design. 8: 39-57
Kawamoto A, Jameson J, Cho K, et al. (2000) Challenges for atomic scale modeling in alternative gate stack engineering Ieee Transactions On Electron Devices. 47: 1787-1794