Sylvia G. Spruytte, Ph.D.
Affiliations: | 2001 | Stanford University, Palo Alto, CA |
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"Sylvia Spruytte"Parents
Sign in to add mentorJames S. Harris | grad student | 2001 | Stanford | |
(MBE growth of nitride -arsenides for long wavelength opto-electronics.) |
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Publications
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Krispin P, Spruytte SG, Harris JS, et al. (2002) Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy Applied Physics Letters. 80: 2120-2122 |
Krispin P, Spruytte SG, Harris JS, et al. (2001) Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy Journal of Applied Physics. 90: 2405-2410 |
Krispin P, Spruytte SG, Harris JS, et al. (2001) Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy Journal of Applied Physics. 89: 6294-6301 |
Spruytte SG, Coldren CW, Harris JS, et al. (2001) Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal Journal of Applied Physics. 89: 4401-4406 |
Krispin P, Spruytte SG, Harris JS, et al. (2001) Deep-level defects in MBE-grown Ga(As,N) layers Physica B-Condensed Matter. 308: 870-873 |
Spruytte SG, Larson MC, Wampler W, et al. (2001) Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy Journal of Crystal Growth. 227: 506-515 |
Spruytte SG, Coldren CW, Marshall AF, et al. (2000) MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics Mrs Internet Journal of Nitride Semiconductor Research. 5: 474-480 |
Coldren CW, Spruytte SG, Harris JS, et al. (2000) Group III nitride–arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1480 |
Larson MC, Coldren CW, Spruytte SG, et al. (2000) Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers Ieee Photonics Technology Letters. 12: 1598-1600 |
Krispin P, Spruytte SG, Harris JS, et al. (2000) Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements Journal of Applied Physics. 88: 4153 |