Christopher W. Coldren, Ph.D.
Affiliations: | 2005 | Stanford University, Palo Alto, CA |
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"Christopher Coldren"Parents
Sign in to add mentor| James S. Harris | grad student | 2005 | Stanford | |
| (Group III-arsenide-nitride long wavelength laser diodes.) | ||||
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| Johansson LA, Akulova YA, Coldren C, et al. (2008) Improving the Performance of Sampled-Grating DBR Laser-Based Analog Optical Transmitters Journal of Lightwave Technology. 26: 807-815 |
| Spruytte SG, Coldren CW, Harris JS, et al. (2001) Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal Journal of Applied Physics. 89: 4401-4406 |
| Spruytte SG, Larson MC, Wampler W, et al. (2001) Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy Journal of Crystal Growth. 227: 506-515 |
| Spruytte SG, Coldren CW, Marshall AF, et al. (2000) MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics Mrs Internet Journal of Nitride Semiconductor Research. 5: 474-480 |
| Coldren CW, Spruytte SG, Harris JS, et al. (2000) Group III nitride–arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1480 |
| Larson MC, Coldren CW, Spruytte SG, et al. (2000) Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers Ieee Photonics Technology Letters. 12: 1598-1600 |
| Coldren C, Larson M, Spruytte S, et al. (2000) 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions Electronics Letters. 36: 951 |
| Yairi MB, Coldren CW, Miller DAB, et al. (1999) High-speed, optically controlled surface-normal optical switch based on diffusive conduction Applied Physics Letters. 75: 597-599 |
| Mao E, Coldren CW, Harris JS, et al. (1999) GaAs/AlGaAs multiple-quantum-well in-line fiber intensity modulator Applied Physics Letters. 75: 310-312 |