Dwight Streit
Affiliations: | Electrical Engineering | University of California, Los Angeles, Los Angeles, CA |
Area:
Advanced semiconductors, microelectronics, radar, communication and satellite payload electronicsGoogle:
"Dwight Streit"
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Publications
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Park J, Rim YS, Li C, et al. (2016) Deep-level defect distribution as a function of oxygen partial pressure in sputtered ZnO thin-film transistors Current Applied Physics. 16: 1369-1373 |
Chou YC, Leung D, Lai R, et al. (2002) High reliability of 0.1 μm InGaAs/InAlAs/InP high electron mobility transistors microwave monolithic integrated circuit on 3-inch InP substrates Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41: 1099-1103 |
Chou YC, Leung D, Scarpulla J, et al. (2001) High reliability of 0.1 μm InGaAs/InAlAs/InP HEMT MMICS on 3-inch InP substrates Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 618-621 |
Kobayashi KW, Cowles JC, Tran LT, et al. (1999) A 44-GHz-High IP3 InP HBT MMIC Amplifier for Low DC Power Millimeter-Wave Receiver Applications Ieee Journal of Solid-State Circuits. 34: 1188-1195 |
Lai R, Barsky M, Huang T, et al. (1998) An InP HEMT MMIC LNA with 7.2-dB Gain at 190 GHz Ieee Microwave and Guided Wave Letters. 8: 393-395 |
Kobayashi KW, Cowles J, Tran LT, et al. (1998) High IP3-low DC power 44 GHz InP-HBT amplifier Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 29-32 |
Kobayashi KW, Cowles J, Tran LT, et al. (1997) A 50-MHz-55-GHz multidecade InP-based HBT distributed amplifier Ieee Microwave and Guided Wave Letters. 7: 353-355 |
Kobayashi KW, Wang H, Lai R, et al. (1997) An InP HEMT W-band amplifier with monolithically integrated HBT bias regulation Ieee Microwave and Guided Wave Letters. 7: 222-224 |
Kobayashi KW, Tran LT, Oki AK, et al. (1997) An 18-22-GHz down-converter based on GaAs/AlGaAs HBT-Schottky diode integrated technology Ieee Microwave and Guided Wave Letters. 7: 106-108 |
Kobayashi KW, Oki AK, Cowles J, et al. (1997) The voltage-dependent IP3 performance of a 35-GHz InAlAs/InGaAs-InP HBT amplifier Ieee Microwave and Guided Wave Letters. 7: 66-68 |