Michael Moewe, Ph.D.
Affiliations: | 2009 | University of California, Berkeley, Berkeley, CA, United States |
Area:
Microsystems and materials; Nano-Optoelectronic devicesGoogle:
"Michael Moewe"Parents
Sign in to add mentor| Constance J. Chang-Hasnain | grad student | 2009 | UC Berkeley | |
| (Growth and characterization of III-V nanowires and nanoneedles.) | ||||
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Publications
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| Chuang LC, Sedgwick FG, Chen R, et al. (2011) GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate. Nano Letters. 11: 385-90 |
| Chuang LC, Moewe M, Ng KW, et al. (2011) GaAs nanoneedles grown on sapphire Applied Physics Letters. 98 |
| Crankshaw S, Chuang LC, Moewe M, et al. (2010) Polarized zone-center phonon modes of wurtzite GaAs Physical Review B - Condensed Matter and Materials Physics. 81 |
| Chen R, Crankshaw S, Tran T, et al. (2010) Second-harmonic generation from a single wurtzite GaAs nanoneedle Applied Physics Letters. 96 |
| Chen R, Chuang LC, Tran T, et al. (2010) Spatially resolved, polarized photoluminescence from wurtzite InGaAs/GaAs nanoneedles Optics Infobase Conference Papers |
| Chuang LC, Ng KW, Tran TTD, et al. (2010) Single crystalline gaas nanoneedles grown on 46% lattice-mismatched sapphire with bright luminescence Optics Infobase Conference Papers |
| Crankshaw S, Sedgwick FG, Moewe M, et al. (2009) Electron spin polarization induced by linearly polarized light in a (110) GaAs quantum-well waveguide. Physical Review Letters. 102: 206604 |
| Moewe M, Chuang LC, Crankshaw S, et al. (2009) Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission. Optics Express. 17: 7831-6 |
| Moewe M, Chuang LC, Crankshaw S, et al. (2009) Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon- Transparent emission Optics Express. 17: 7831-7836 |
| Zhou Y, Huang MCY, Chase C, et al. (2009) High-index-contrast grating (HCG) and Its applications in optoelectronic devices Ieee Journal On Selected Topics in Quantum Electronics. 15: 1485-1499 |