Kevin J. Yang, Ph.D.
Affiliations: | 2002 | University of California, Berkeley, Berkeley, CA, United States |
Area:
Semiconductor Device TechnologiesGoogle:
"Kevin Yang"Parents
Sign in to add mentorChenming Hu | grad student | 2002 | UC Berkeley | |
(Characterization and modeling of advanced gate dielectrics.) |
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Publications
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Yang KJ, Takeuchi H, King T, et al. (2002) Frequency Dependence of Capacitance Measurement for Advanced Gate Dielectrics The Japan Society of Applied Physics |
Chang L, Yang KJ, Yeo YC, et al. (2002) Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs Ieee Transactions On Electron Devices. 49: 2288-2294 |
Lu Q, Yeo YC, Yang KJ, et al. (2001) Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric Ieee Electron Device Letters. 22: 324-326 |
Yeo YC, Lu Q, Ranade P, et al. (2001) Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 22: 227-229 |
Register LF, Rosenbaum E, Yang K. (1999) Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices Applied Physics Letters. 74: 457-459 |