Kevin J. Yang, Ph.D.

Affiliations: 
2002 University of California, Berkeley, Berkeley, CA, United States 
Area:
Semiconductor Device Technologies
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Chenming Hu grad student 2002 UC Berkeley
 (Characterization and modeling of advanced gate dielectrics.)
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Publications

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Yang KJ, Takeuchi H, King T, et al. (2002) Frequency Dependence of Capacitance Measurement for Advanced Gate Dielectrics The Japan Society of Applied Physics
Chang L, Yang KJ, Yeo YC, et al. (2002) Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs Ieee Transactions On Electron Devices. 49: 2288-2294
Lu Q, Yeo YC, Yang KJ, et al. (2001) Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric Ieee Electron Device Letters. 22: 324-326
Yeo YC, Lu Q, Ranade P, et al. (2001) Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 22: 227-229
Register LF, Rosenbaum E, Yang K. (1999) Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices Applied Physics Letters. 74: 457-459
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