Ebo H. Croffie, Ph.D.

Affiliations: 
2001 University of California, Berkeley, Berkeley, CA, United States 
Area:
Integrated Circuits (INC); Solid-State Devices
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"Ebo Croffie"

Parents

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Andrew R. Neureuther grad student 2001 UC Berkeley
 (Simulation tools for optical resist models (STORM).)
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Publications

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Fan Y, Zavyalova L, Zhang Y, et al. (2009) Resist development modeling for OPC accuracy improvement Proceedings of Spie - the International Society For Optical Engineering. 7274
Pathak P, Yan Q, Schmoeller T, et al. (2009) Building bulk-resist model for image formation in chemically amplified resists at EUV Microelectronic Engineering. 86: 787-791
Cheng M, Yuan L, Croffie E, et al. (2002) Improving resist resolution and sensitivity via electric-field enhanced postexposure baking Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 734-740
Croffie E, Yuan L, Cheng M, et al. (2001) Survey of chemically amplified resist models and simulator algorithms Proceedings of Spie - the International Society For Optical Engineering. 4345: 983-991
Lee SI, Ng KC, Orimoto T, et al. (2001) LAVA web-based remote simulation: Enhancements for education and technology innovation Proceedings of Spie - the International Society For Optical Engineering. 4346: 1500-1506
Cheng M, Tyminski J, Croffie E, et al. (2000) Modeling anomalous depth dependent dissolution effects in chemically amplified resists Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1294-1298
Cheng M, Croffie E, Yuan L, et al. (2000) Enhancement of resist resolution and sensitivity via applied electric field Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3318-3322
Croffie E, Yuan L, Cheng M, et al. (2000) Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3340-3344
Croffie E, Cheng M, Neureuther A, et al. (2000) Overview of the STORM program application to 193nm single layer resists Microelectronic Engineering. 53: 437-442
Croffie E, Cheng M, Neureuther A. (1999) Moving boundary transport model for acid diffusion in chemically amplified resists Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 3339-3344
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