Kartik Ganapathi, Ph.D.
Affiliations: | 2013 | Electrical Engineering and Computer Sciences | University of California, Berkeley, Berkeley, CA, United States |
Area:
Physical Electronics (PHY); Design, Modeling and Analysis (DMA); Energy (ENE); Scientific Computing (SCI)Google:
"Kartik Ganapathi"Parents
Sign in to add mentor| Sayeef Salahuddin | grad student | 2013 | UC Berkeley | |
| (Tunneling in low-power device-design: A bottom-up view of issues, challenges, and opportunities.) | ||||
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Publications
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| Chandrasekar H, Ganapathi KL, Bhattacharjee S, et al. (2016) Optical-phonon-limited high-field transport in layered materials Ieee Transactions On Electron Devices. 63: 767-772 |
| Ganapathi K, Yoon Y, Lundstrom M, et al. (2013) Ballistic I-v characteristics of short-channel graphene field-effect transistors: Analysis and optimization for analog and RF applications Ieee Transactions On Electron Devices. 60: 958-964 |
| Mishra V, Smith S, Ganapathi K, et al. (2013) Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit Technical Digest - International Electron Devices Meeting, Iedm. 5.6.1-5.6.4 |
| Ganapathi K, Lundstrom M, Salahuddin S. (2012) Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered? Device Research Conference - Conference Digest, Drc. 85-86 |
| Ganapathi K, Salahuddin S. (2012) Zener tunneling: Congruence between semi-classical and quantum ballistic formalisms Journal of Applied Physics. 111 |
| Yoon Y, Ganapathi K, Salahuddin S. (2011) How good can monolayer MoS₂ transistors be? Nano Letters. 11: 3768-73 |
| Ganapathi K, Salahuddin S. (2011) Heterojunction vertical band-to-band tunneling transistors for steep subthreshold swing and high on current Ieee Electron Device Letters. 32: 689-691 |
| Ganapathi K, Yoon Y, Salahuddin S. (2011) Monolayer MoS2 transistors - Ballistic performance limit analysis Device Research Conference - Conference Digest, Drc. 79-80 |
| Ko H, Takei K, Kapadia R, et al. (2010) Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9 |
| Ganapathi K, Yoon Y, Salahuddin S. (2010) Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors Device Research Conference - Conference Digest, Drc. 57-58 |