Gregory Belenky
Affiliations: | Electrical and Computer Engineering | Stony Brook University, Stony Brook, NY, United States |
Area:
Optoelectronic device and systems; Semiconductor devices, physics and technology.Google:
"Gregory Belenky"Children
Sign in to add trainee| Rauf Adilovich Suleymanov | grad student | 1972-1976 | Azerbaijan Academy of Sciences (Physics Tree) |
| Dmitri Donetski | grad student | 2000 | SUNY Stony Brook |
| Leon Shterengas | grad student | 2003 | SUNY Stony Brook |
| David Westerfeld | grad student | 2005 | SUNY Stony Brook |
| Alexandre Gourevitch | grad student | 2006 | SUNY Stony Brook |
| Takashi Hosoda | grad student | 2011 | SUNY Stony Brook |
| Seungyong Jung | grad student | 2012 | SUNY Stony Brook |
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Publications
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| Jiang J, Shterengas L, Kipshidze G, et al. (2021) High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm. Optics Letters. 46: 1967-1970 |
| Jiang J, Shterengas L, Stein A, et al. (2020) Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm Ieee Photonics Technology Letters. 32: 1017-1020 |
| Feng T, Shterengas L, Hosoda T, et al. (2020) Passively Mode-Locked 2.7 and 3.2 μm GaSb-Based Cascade Diode Lasers Journal of Lightwave Technology. 38: 1895-1899 |
| Svensson S, Sarney W, Beck WA, et al. (2020) P-doping with Beryllium of long-wavelength InAsSb Semiconductor Science and Technology |
| Jiang J, Shterengas L, Hosoda T, et al. (2020) Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm Semiconductor Science and Technology. 35: 025016 |
| Liu J, Donetsky D, Jiang H, et al. (2020) Electrical modulation of the LWIR absorption and refractive index in InAsSb-based strained layer superlattice heterostructures Journal of Applied Physics. 128: 83101 |
| Suchalkin S, Ermolaev M, Valla T, et al. (2020) Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices Applied Physics Letters. 116: 32101 |
| Liu R, Shterengas L, Stein A, et al. (2020) GaSb-based heterostructure with buried vacuum pocket photonic crystal layer Electronics Letters. 56: 388-390 |
| Donetsky D, Liu J, Kipshidze G, et al. (2019) InAsSb-based heterostructures for infrared light modulation Applied Physics Letters. 115: 081102 |
| Svensson SP, Beck WA, Sarney WL, et al. (2019) Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap Applied Physics Letters. 114: 122102 |