Kian-Giap Gan, Ph.D.

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Kian-Giap Gan"

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John Edward Bowers grad student 2006 UC Santa Barbara
 (Carrier dynamics in the nitride semiconductors.)
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Publications

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Fang AW, Koch BR, Gan KG, et al. (2008) A racetrack mode-locked silicon evanescent laser. Optics Express. 16: 1393-8
Okuno YL, Gan KG, Chou HF, et al. (2005) Stable polarization operation of 1.3-/spl mu/m wavelength vertical-cavity surface-emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding Ieee Journal On Selected Topics in Quantum Electronics. 11: 1006-1014
Gan KG, Bowers JE. (2004) Measurement of gain, group index, group velocity dispersion, and linewidth enhancement factor of an InGaN multiple quantum-well laser diode Ieee Photonics Technology Letters. 16: 1256-1258
Lasaosa D, Shi JW, Pasquariello D, et al. (2004) Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance Ieee Journal On Selected Topics in Quantum Electronics. 10: 728-741
Geske J, Gan KG, Okuno YL, et al. (2004) Vertical-cavity surface-emitting laser active regions for enhanced performance with optical pumping Ieee Journal of Quantum Electronics. 40: 1155-1162
Gan KG, Sun CK, DenBaars SP, et al. (2004) Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes Applied Physics Letters. 84: 4675-4677
Gan KG, Bowers JE, Sun CK. (2004) Femtosecond Carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 669-670
Okuno YL, Gan KG, Chou HF, et al. (2004) Stable polarization operation of 1.3 μm-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding Conference Digest - Ieee International Semiconductor Laser Conference. 117-118
Shi JW, Gan KG, Bowers JE, et al. (2003) Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (∼1.3μm) Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 2: 406
Sun CK, Chen YH, Shi JW, et al. (2003) Electron relaxation and transport dynamics in low-temperature-grown gaas under 1 eV optical excitation Applied Physics Letters. 83: 911-913
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