Amber C. Abare, Ph.D.
Affiliations: | 2000 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Amber Abare"Parents
Sign in to add mentor| Larry A. Coldren | grad student | 2000 | UC Santa Barbara | |
| (Growth and fabrication of nitride -based distributed feedback laser diodes.) | ||||
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Publications
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| Bergmann M, Kuhr T, Haberern K, et al. (2004) Materials and device developments for ultraviolet LEDs and laser diodes Device Research Conference - Conference Digest, Drc. 151-152 |
| Edmond J, Abare A, Bergman M, et al. (2004) High efficiency GaN-based LEDs and lasers on SiC Journal of Crystal Growth. 272: 242-250 |
| Sun CK, Chu SW, Tai SP, et al. (2001) Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy. Scanning. 23: 182-92 |
| Sun CK, Huang YK, Liang JC, et al. (2001) Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells Applied Physics Letters. 78: 1201-1203 |
| Huang YC, Liang JC, Sun CK, et al. (2001) Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells Applied Physics Letters. 78: 928-930 |
| Hansen M, Abare AC, Kozodoy P, et al. (2000) Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes Mrs Internet Journal of Nitride Semiconductor Research. 5: 14-19 |
| Hansen M, Fini P, Zhao L, et al. (2000) Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Applied Physics Letters. 76: 529-531 |
| Berkowicz E, Gershoni D, Bahir G, et al. (2000) Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/GaNquantum structures Physical Review B. 61: 10994-11008 |
| Özgür Ü, Bergmann MJ, Casey HC, et al. (2000) Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells Applied Physics Letters. 77: 109-111 |
| Haberer ED, Chen C, Abare A, et al. (2000) Channeling as a mechanism for dry etch damage in GaN Applied Physics Letters. 76: 3941-3943 |