Monica C. Hansen, Ph.D.
Affiliations: | 2001 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Monica Hansen"Parents
Sign in to add mentor| Steven P Denbaars | grad student | 2001 | UC Santa Barbara | |
| (Improved characteristics of indium gallium nitride-based laser diodes.) | ||||
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Publications
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| Hansen M, Fini P, Craven M, et al. (2002) Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN Journal of Crystal Growth. 234: 623-630 |
| Parish G, Hansen M, Moran B, et al. (2001) Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 297-300 |
| Hierro A, Hansen M, Zhao L, et al. (2001) Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN Physica Status Solidi B-Basic Solid State Physics. 228: 937-946 |
| Hansen M, Chen LF, Speck JS, et al. (2001) Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes Physica Status Solidi B-Basic Solid State Physics. 228: 353-356 |
| Hierro A, Kwon D, Ringel SA, et al. (2000) Deep levels in n-type Schottky and p+-n homojunction GaN diodes Mrs Internet Journal of Nitride Semiconductor Research. 5: 922-928 |
| Hansen M, Fini P, Zhao L, et al. (2000) Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Applied Physics Letters. 76: 529-531 |
| Haberer ED, Chen C, Abare A, et al. (2000) Channeling as a mechanism for dry etch damage in GaN Applied Physics Letters. 76: 3941-3943 |
| Moran B, Hansen M, Craven MD, et al. (2000) Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates Journal of Crystal Growth. 221: 301-304 |
| Hierro A, Kwon D, Ringel SA, et al. (1999) Deep Levels in n-Type Schottky and p + -n Homojunction GaN Diodes Mrs Proceedings. 595 |
| Kozodoy P, Smorchkova YP, Hansen M, et al. (1999) Polarization-enhanced Mg doping of AlGaN/GaN superlattices Applied Physics Letters. 75: 2444-2446 |