Sten J. Heikman, Ph.D.

2002 University of California, Santa Barbara, Santa Barbara, CA, United States 
Electronics & Photonics
"Sten Heikman"


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Steven Denbaars grad student 2002 UC Santa Barbara
 (MOCVD growth technologies for applications in aluminum gallium nitride/gallium nitride high electron mobility transistors.)
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Wu Y, Jacob-Mitos M, Moore ML, et al. (2008) A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz Ieee Electron Device Letters. 29: 824-826
Smith RP, Sheppard S, Wu YF, et al. (2008) AlGaN/GaN-on-SiC HEMT technology status 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008
Wu YF, Moore M, Abrahamsen A, et al. (2007) High-voltage millimeter-wave GaN HEMTs with 13.7 W/mm power density Technical Digest - International Electron Devices Meeting, Iedm. 405-407
Gao S, Butterworth P, Sambell A, et al. (2007) Microwave class-F and inverse class-F power amplifiers designs using GaN technology and GaAs pHEMT Proceedings of the 36th European Microwave Conference, Eumc 2006. 1719-1722
Palacios T, Chini A, Buttari D, et al. (2006) Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs Ieee Transactions On Electron Devices. 53: 562-565
Xu H, Gao S, Heikman S, et al. (2006) A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz Ieee Microwave and Wireless Components Letters. 16: 22-24
Gao S, Xu H, Heikman S, et al. (2006) Two-stage quasi-class-E power amplifier in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 16: 28-30
Dora Y, Chakraborty A, Heikman S, et al. (2006) Effect of ohmic contacts on buffer leakage of GaN transistors Ieee Electron Device Letters. 27: 529-531
Palacios T, Chakraborty A, Heikman S, et al. (2006) AlGaN/GaN high electron mobility transistors with InGaN back-barriers Ieee Electron Device Letters. 27: 13-15
Palacios T, Shen L, Keller S, et al. (2006) Nitride-based high electron mobility transistors with a GaN spacer Applied Physics Letters. 89
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