Sten J. Heikman, Ph.D.

Affiliations: 
2002 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
Google:
"Sten Heikman"

Parents

Sign in to add mentor
Steven Denbaars grad student 2002 UC Santa Barbara
 (MOCVD growth technologies for applications in aluminum gallium nitride/gallium nitride high electron mobility transistors.)
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Wu Y, Jacob-Mitos M, Moore ML, et al. (2008) A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz Ieee Electron Device Letters. 29: 824-826
Smith RP, Sheppard S, Wu YF, et al. (2008) AlGaN/GaN-on-SiC HEMT technology status 2008 Ieee Csic Symposium: Gaas Ics Celebrate 30 Years in Monterey, Technical Digest 2008
Wu YF, Moore M, Abrahamsen A, et al. (2007) High-voltage millimeter-wave GaN HEMTs with 13.7 W/mm power density Technical Digest - International Electron Devices Meeting, Iedm. 405-407
Gao S, Butterworth P, Sambell A, et al. (2007) Microwave class-F and inverse class-F power amplifiers designs using GaN technology and GaAs pHEMT Proceedings of the 36th European Microwave Conference, Eumc 2006. 1719-1722
Palacios T, Chini A, Buttari D, et al. (2006) Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs Ieee Transactions On Electron Devices. 53: 562-565
Xu H, Gao S, Heikman S, et al. (2006) A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz Ieee Microwave and Wireless Components Letters. 16: 22-24
Gao S, Xu H, Heikman S, et al. (2006) Two-stage quasi-class-E power amplifier in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 16: 28-30
Dora Y, Chakraborty A, Heikman S, et al. (2006) Effect of ohmic contacts on buffer leakage of GaN transistors Ieee Electron Device Letters. 27: 529-531
Palacios T, Chakraborty A, Heikman S, et al. (2006) AlGaN/GaN high electron mobility transistors with InGaN back-barriers Ieee Electron Device Letters. 27: 13-15
Palacios T, Shen L, Keller S, et al. (2006) Nitride-based high electron mobility transistors with a GaN spacer Applied Physics Letters. 89
See more...