Thomas M. Katona, Ph.D.

2003 University of California, Santa Barbara, Santa Barbara, CA, United States 
Electronics & Photonics
"Thomas Katona"


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Steven Denbaars grad student 2003 UC Santa Barbara
 (Development of ultraviolet nitride-based light emitting diodes.)
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Son KA, Yang B, Prokopuk N, et al. (2011) RF GaN HEMT sensors for detection of caustic chemicals Ieee Sensors Journal. 11: 3476-3478
Uedono A, Ishibashi S, Keller S, et al. (2009) Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Journal of Applied Physics. 105
Son KA, Yang BH, Prokopuk N, et al. (2009) Novel GaN-based chemical sensors for long-range chemical threat detection Acs Symposium Series. 1016: 155-168
Lübbert D, Baumbach T, Holý V, et al. (2008) Microdiffraction imaging of dislocation densities in microstructured samples Epl. 82
Reed ML, Garrett GA, Sampath AV, et al. (2008) Progress in high efficiency UV LED research for reagentless bioagent detection and water purification International Journal of High Speed Electronics and Systems. 18: 179-185
Khan A, Balakrishnan K, Katona T. (2008) Ultraviolet light-emitting diodes based on group three nitrides Nature Photonics. 2: 77-84
Adivarahan V, Fareed Q, Islam M, et al. (2007) Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN Japanese Journal of Applied Physics, Part 2: Letters. 46: L877-L879
Fareed Q, Adivarahan V, Gaevski M, et al. (2007) Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire Japanese Journal of Applied Physics, Part 2: Letters. 46: L752-L754
Adivarahan V, Fareed Q, Srivastava S, et al. (2007) Robust 285 nm deep UV light emitting diodes over metal organic hydride vapor phase epitaxially grown AlN/sapphire templates Japanese Journal of Applied Physics, Part 2: Letters. 46: L537-L539
Deng J, Bilenko Y, Lunev A, et al. (2007) 247 nm ultra-violet light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L263-L264
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