Ramakrishna Vetury, Ph.D.

Affiliations: 
2000 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Ramakrishna Vetury"

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Umesh Mishra grad student 2000 UC Santa Barbara
 (Polarization induced 2DEG in aluminum gallium nitride/gallium nitride HEMTs: On the origin, DC and transient characterization.)
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Publications

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Ferrer-Pérez JA, Claflin B, Jena D, et al. (2014) Photoluminescence-based electron and lattice temperature measurements in GaN-based HEMTs Journal of Electronic Materials. 43: 341-347
Heller ER, Vetury R, Green DS. (2011) Development of a versatile physics-based finite-element model of an AlGaN/GaN HEMT capable of accommodating process and epitaxy variations and calibrated using multiple DC parameters Ieee Transactions On Electron Devices. 58: 1091-1095
Green DS, Vembu B, Hepper D, et al. (2008) GaN HEMT thermal behavior and implications for reliability testing and analysis Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2026-2029
Poulton MJ, Leverich WK, Garber P, et al. (2006) AlGaN/GaN 120W WCDMA doherty amplifier with digital pre-distortion correction Ieee Wireless and Microwave Technology Conference, Wamicon 2006
Vetury R, Shealy JB, Green DS, et al. (2006) Performance and RF reliability of GaN-on-SiC HEMT's using dual-gate architectures Ieee Mtt-S International Microwave Symposium Digest. 714-717
Poulton MJ, Leverich WK, Shealy JB, et al. (2006) Linearity and efficiency performance of GaN HEMTs with digital pre-distortion correction Ieee Mtt-S International Microwave Symposium Digest. 1327-1330
Conlon JP, Zhang N, Poulton MJ, et al. (2006) GaN wide band power integrated circuits Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 85-88
Vetury R, Wei Y, Green DS, et al. (2005) High power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications Ieee Mtt-S International Microwave Symposium Digest. 2005: 487-490
Green DS, Gibb SR, Hosse B, et al. (2004) Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability Journal of Crystal Growth. 272: 285-292
Vetury R, Zhang NQ, Keller S, et al. (2001) The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs Ieee Transactions On Electron Devices. 48: 560-566
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