Lee S. McCarthy, Ph.D.
Affiliations: | 2001 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Lee McCarthy"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2001 | UC Santa Barbara | |
| (Aluminum gallium nitride/gallium nitride heterojunction bipolar transistors.) | ||||
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Publications
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| Kocan M, Umana-Membreno GA, Kilburn MR, et al. (2008) Scanning ion probe studies of silicon implantation profiles in AlGaN/GaN HEMT heterostructures Journal of Electronic Materials. 37: 554-557 |
| Kocan M, Umana-Membreno GA, Recht F, et al. (2008) GaN vertical n-p junctions prepared by Si ion implantation Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1938-1940 |
| Pei Y, Shen L, Palacios T, et al. (2007) Study of the n+ GaN cap in AlGaN/GaN high electron mobility transistors with reduced source-drain resistance Japanese Journal of Applied Physics, Part 2: Letters. 46: L842-L844 |
| Shen L, Pei Y, McCarthy L, et al. (2007) Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation Ieee Mtt-S International Microwave Symposium Digest. 623-626 |
| Chu R, Shu CS, Wong MH, et al. (2007) Impact of CF4 plasma treatment on GaN Ieee Electron Device Letters. 28: 781-783 |
| Lian C, Xing H, Wang CS, et al. (2007) DC characteristics of AlGaAs/GaAs/GaN HBTs formed by direct wafer fusion Ieee Electron Device Letters. 28: 8-10 |
| Recht F, McCarthy L, Shen L, et al. (2007) AlGaN/ GaN HEMTs with large angle implanted nonalloyed ohmic contacts 65th Drc Device Research Conference. 37-38 |
| Wong MH, Pei Y, Palacios T, et al. (2007) Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth Applied Physics Letters. 91 |
| Lian C, Xing HG, Wang CS, et al. (2007) Gain degradation mechanisms in wafer fused AlGaAsGaAsGaN heterojunction bipolar transistors Applied Physics Letters. 91 |
| Kocan M, Umana-Membreno GA, Chung JS, et al. (2007) Characterization of non-alloyed ohmic contacts to Si-implanted AlGaN/GaN heterostructures for high-electron mobility transistors Journal of Electronic Materials. 36: 1156-1159 |