Likun Shen, Ph.D.
Affiliations: | 2004 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Likun Shen"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2004 | UC Santa Barbara | |
| (Advanced polarization-based design of aluminum gallium nitride/gallium nitride HEMTs.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Wu YF, Gritters J, Shen L, et al. (2014) KV-class GaN-on-Si HEMTs enabling 99% efficiency converter at 800 v and 100 kHz Ieee Transactions On Power Electronics. 29: 2634-2637 |
| Chu R, Poblenz C, Wong MH, et al. (2008) Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013 |
| Chu R, Shen L, Fichtenbaum N, et al. (2008) Correlation between DC-RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs Ieee Electron Device Letters. 29: 303-305 |
| Pei Y, Chu R, Shen L, et al. (2008) Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors Ieee Electron Device Letters. 29: 300-302 |
| Chu R, Shen L, Fichtenbaum N, et al. (2008) Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts Ieee Electron Device Letters. 29: 297-299 |
| Chu R, Shen L, Fichtenbaum N, et al. (2008) V-Gate GaN HEMTs for X-Band power applications Ieee Electron Device Letters. 29: 974-976 |
| Pei Y, Poblenz C, Corrion AL, et al. (2008) X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE Electronics Letters. 44: 598-599 |
| Pei Y, Shen L, Palacios T, et al. (2007) Study of the n+ GaN cap in AlGaN/GaN high electron mobility transistors with reduced source-drain resistance Japanese Journal of Applied Physics, Part 2: Letters. 46: L842-L844 |
| Pei Y, Chu R, Fichtenbaum NA, et al. (2007) Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Japanese Journal of Applied Physics, Part 2: Letters. 46: L1087-L1089 |
| Chakraborty A, Shen L, Mishra UK. (2007) Interdigitated Multipixel Arrays for the Fabrication of High-Power Light-Emitting Diodes With Very Low Series Resistances, Reduced Current Crowding, and Improved Heat Sinking Ieee Transactions On Electron Devices. 54: 1083-1090 |