Yuvaraj Dora, Ph.D.
Affiliations: | 2006 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Yuvaraj Dora"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2006 | UC Santa Barbara | |
| (Understanding material and process limits for high breakdown voltage aluminum gallium nitride/gallium nitride HEMTs.) | ||||
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Publications
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| Wu YF, Coffie R, Fichtenbaum N, et al. (2011) Total GaN solution to electrical power conversion Device Research Conference - Conference Digest, Drc. 217-218 |
| Keller S, Dora Y, Chowdhury S, et al. (2011) Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2086-2088 |
| Keller S, Dora Y, Wu F, et al. (2010) Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition Applied Physics Letters. 97 |
| Dora Y, Han S, Klenov D, et al. (2006) ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 575-581 |
| Dora Y, Chakraborty A, McCarthy L, et al. (2006) High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Ieee Electron Device Letters. 27: 713-715 |
| Dora Y, Chakraborty A, Heikman S, et al. (2006) Effect of ohmic contacts on buffer leakage of GaN transistors Ieee Electron Device Letters. 27: 529-531 |
| Suh CS, Dora Y, Fichtenbaum N, et al. (2006) High-breakdown enhancement-mode AlGaN/GaN HEMTs with integrated slant field-plate Technical Digest - International Electron Devices Meeting, Iedm |
| Palacios T, Dora Y, Chakraborty A, et al. (2006) Optimization of AlGaN/GaN HEMTs for high frequency operation Physica Status Solidi (a) Applications and Materials Science. 203: 1845-1850 |
| Dora Y, Suh C, Chakraborty A, et al. (2005) Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 2005: 191-192 |
| Xing H, Dora Y, Chini A, et al. (2004) High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Ieee Electron Device Letters. 25: 161-163 |