Siddharth Rajan, Ph.D.
Affiliations: | 2006 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Siddharth Rajan"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2006 | UC Santa Barbara | |
| (Advanced polarization engineering for gallium nitride-based transistors.) | ||||
Children
Sign in to add trainee| Sriram Krishnamoorthy | grad student | 2014 | Ohio State |
| Zhanbo Xia | grad student | 2015-2020 | |
| Towhidur Razzak | grad student | 2017-2021 | Ohio State (Physics Tree) |
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Publications
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| Sohel SH, Xie A, Beam E, et al. (2020) Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors Applied Physics Express. 13: 36502 |
| Cheng J, Yang H, Wang C, et al. (2020) Nanoscale etching of perovskite oxides for field effect transistor applications Journal of Vacuum Science & Technology B. 38: 12201 |
| Lee H, Zhang Y, Chen Z, et al. (2020) Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension Ieee Transactions On Electron Devices. 67: 3553-3557 |
| Xue H, Hussain K, Razzak T, et al. (2020) Al 0.65 Ga 0.35 N/Al 0.4 Ga 0.6 N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm Ieee Electron Device Letters. 41: 677-680 |
| Cheng J, Wang C, Freeze C, et al. (2020) High-Current Perovskite Oxide BaTiO 3 /BaSnO 3 Heterostructure Field Effect Transistors Ieee Electron Device Letters. 41: 621-624 |
| Sohel SH, Cao Y, Lu W, et al. (2020) Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN x Passivation Ieee Electron Device Letters. 41: 19-22 |
| Jamal-Eddine Z, Hasan SMN, Gunning B, et al. (2020) Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs Applied Physics Letters. 117: 51103 |
| Zhang Y, Chen Z, Li W, et al. (2020) Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707 |
| Kalarickal NK, Xia Z, McGlone JF, et al. (2020) High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706 |
| Verma D, Adnan MMR, Rahman MW, et al. (2020) Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy Applied Physics Letters. 116: 202102 |