Yi Pei, Ph.D.
Affiliations: | 2009 | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Yi Pei"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2009 | UC Santa Barbara | |
| (Advanced gallium nitride based transistors for mm-wave applications.) | ||||
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Publications
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| Sasikumar A, Arehart AR, Martin-Horcajo S, et al. (2013) Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103 |
| Arehart AR, Sasikumar A, Rajan S, et al. (2013) Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22 |
| Cardwell DW, Arehart AR, Poblenz C, et al. (2012) Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100 |
| Möreke J, Ťapajna M, Uren MJ, et al. (2012) Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability Physica Status Solidi (a) Applications and Materials Science. 209: 2646-2652 |
| Higashiwaki M, Pei Y, Chu R, et al. (2011) Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Ieee Transactions On Electron Devices. 58: 1681-1686 |
| Mao W, Yang C, Hao Y, et al. (2011) The effect of a HfO 2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT Chinese Physics B. 20: 097203 |
| Arehart AR, Malonis AC, Poblenz C, et al. (2011) Next generation defect characterization in nitride HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2242-2244 |
| Yang CK, Roblin P, Groote FD, et al. (2010) Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088 |
| Zomorrodian V, Pei Y, Mishra UK, et al. (2010) High-efficiency Class e MMIC power amplifiers at 4.0 GHz using AIGaN/GaN HEMT technology Ieee Mtt-S International Microwave Symposium Digest. 513-516 |
| Nidhi, Dasgupta S, Pei Y, et al. (2010) N-polar GaN/AlN MIS-HEMT for ka-band power applications Ieee Electron Device Letters. 31: 1437-1439 |