Srabanti Chowdhury, Ph.D.
Affiliations: | 2010 | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Srabanti Chowdhury"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2010 | UC Santa Barbara | |
| (Aluminum Gallium nitride / Gallium nitride CAVETs for high power switching application.) | ||||
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Publications
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| Lee KJ, Nakazato Y, Chun J, et al. (2022) Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN. Nanotechnology |
| Malakoutian M, Field DE, Hines NJ, et al. (2021) Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling. Acs Applied Materials & Interfaces. 13: 60553-60560 |
| Ji D, Li W, Chowdhury S. (2018) A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs Ieee Transactions On Electron Devices. 65: 4271-4275 |
| Ji D, Agarwal A, Li W, et al. (2018) Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation Ieee Transactions On Electron Devices. 65: 483-487 |
| Ji D, Agarwal A, Li H, et al. (2018) 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates Ieee Electron Device Letters. 39: 863-865 |
| Ji D, Gupta C, Agarwal A, et al. (2018) Large-Area |
| Gao J, Kaya A, Chopdekar RV, et al. (2018) A study of temperature dependent current–voltage (I–V–T) characteristics in Ni/sol–gel β-Ga2O3/n-GaN structure Journal of Materials Science: Materials in Electronics. 29: 11265-11270 |
| Chowdhury S. (2017) Recent achievements and pending challenges in Gallium Nitride vertical device development The Japan Society of Applied Physics |
| Soligo R, Sabatti F, Chowdhury S, et al. (2017) Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations Ieee Transactions On Electron Devices. 64: 4442-4449 |
| Ji D, Laurent MA, Agarwal A, et al. (2017) Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ieee Transactions On Electron Devices. 64: 805-808 |