Brian L. Swenson, Ph.D.

2011 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Electronics & Photonics
"Brian Swenson"


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Umesh Mishra grad student 2011 UC Santa Barbara
 (Contributions to the Understanding of (Aluminum,Gallium)Nitride - Silicon Nitride Interfaces.)
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Kikkawa T, Hosoda T, Imanishi K, et al. (2015) 600 v JEDEC-qualified highly reliable GaN HEMTs on Si substrates Technical Digest - International Electron Devices Meeting, Iedm. 2015: 2.6.1-2.6.4
Wu YF, Gritters J, Shen L, et al. (2014) KV-class GaN-on-Si HEMTs enabling 99% efficiency converter at 800 v and 100 kHz Ieee Transactions On Power Electronics. 29: 2634-2637
Chowdhury S, Swenson BL, Wong MH, et al. (2013) Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Semiconductor Science and Technology. 28
Schaake CA, Brown DF, Swenson BL, et al. (2013) A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency Semiconductor Science and Technology. 28
Yeluri R, Liu X, Swenson BL, et al. (2013) Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. 114
Chowdhury S, Wong MH, Swenson BL, et al. (2012) CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion Ieee Electron Device Letters. 33: 41-43
Yeluri R, Swenson BL, Mishra UK. (2012) Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material Journal of Applied Physics. 111
Lal S, Snow E, Lu J, et al. (2012) InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864
Chowdhury S, Swenson BL, Lu J, et al. (2011) Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers Japanese Journal of Applied Physics. 50
Singisetti U, Wong MH, Dasgupta S, et al. (2011) Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth Ieee Electron Device Letters. 32: 137-139
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