Vamsi K. Paidi, Ph.D.

Affiliations: 
2004 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Vamsi Paidi"

Parents

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Mark Rodwell grad student 2004 UC Santa Barbara
 (MMIC power amplifiers in gallium nitride HEMT and indium phosphide HBT technologies.)
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Publications

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Rodwell M, Griffith Z, Parthasarathy N, et al. (2006) Frequency limits of bipolar integrated circuits Ieee Mtt-S International Microwave Symposium Digest. 329-332
Paidi VK, Griffith Z, Wei Y, et al. (2005) G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers Ieee Transactions On Microwave Theory and Techniques. 53: 598-605
Griffith Z, Dong Y, Scott D, et al. (2005) Transistor and circuit design for 100-200-GHz ICs Ieee Journal of Solid-State Circuits. 40: 2061-2068
Rodwell M, Griffith Z, Paidi V, et al. (2005) InP HBT digital ICs and MMICs in the 140-220 GHz band The Joint 30th International Conference On Infrared and Millimeter Waves and 13th International Conference On Terahertz Electronics, 2005. Irmmw-Thz 2005. 2: 620-621
Fung AK, Samoska L, Velebir J, et al. (2005) Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz Ecs Transactions. 1: 44-49
Xie S, Paidi V, Heikman S, et al. (2004) High linearity GaN HEMT power amplifier with pre-linearization gate diode International Journal of High Speed Electronics and Systems. 14: 847-852
Rodwell M, Griffith Z, Scott D, et al. (2004) Transistor and circuit design for 100-200 GHz ICs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 207-210
Paidi V, Griffith Z, Wei Y, et al. (2004) Common base amplifier with 7- dB gain at 176 GHz in InP mesa DHBT technology Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 189-192
Paidi V, Xie S, Coffie R, et al. (2003) High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology Ieee Transactions On Microwave Theory and Techniques. 51: 643-652
Xie S, Paidi V, Coffie R, et al. (2003) High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286
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