Christopher Sanabria, Ph.D.
Affiliations: | 2006 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Christopher Sanabria"Parents
Sign in to add mentor| Robert A. York | grad student | 2006 | UC Santa Barbara | |
| (Noise of aluminum gallium nitride/gallium nitride HEMTs and oscillators.) | ||||
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Publications
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| Sanabria C, Chakraborty A, Xu H, et al. (2006) The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs Ieee Electron Device Letters. 27: 19-21 |
| Palacios T, Dora Y, Chakraborty A, et al. (2006) Optimization of AlGaN/GaN HEMTs for high frequency operation Physica Status Solidi (a) Applications and Materials Science. 203: 1845-1850 |
| Sanabria C, Xu H, Palacios T, et al. (2005) Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs Ieee Transactions On Microwave Theory and Techniques. 53: 762-768 |
| Sanabria C, Xu H, Heikman S, et al. (2005) A GaN differential oscillator with improved harmonic performance Ieee Microwave and Wireless Components Letters. 15: 463-465 |
| Xu H, Sanabria C, Chini A, et al. (2004) A new field-plated GaN HEMT structure with improved power and noise performance International Journal of High Speed Electronics and Systems. 14: 810-815 |
| Xu H, Sanabria C, Chini A, et al. (2004) A C-band high-dynamic range GaN HEMT low-noise amplifier Ieee Microwave and Wireless Components Letters. 14: 262-264 |
| Xu H, Pervez NK, Hansen PJ, et al. (2003) Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits Ieee Electron Device Letters. 25: 273-278 |