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Vishwas Jaju, Ph.D.

Affiliations: 
2008 Electrical and Computer Engineering Iowa State University, Ames, IA, United States 
Area:
Electronics and Electrical Engineering
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Vikram L. Dalal grad student 2008 Iowa State
 (Device quality low temperature gate oxide growth using electron cyclotron resonance plasma oxidation of silicon.)

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Publications

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Jaju V, Dalal V. (2008) Growth and properties of fluorinated plasma oxide for Si MOSFET devices Journal of Non-Crystalline Solids. 354: 2839-2842
Jaju V, Dalal V. (2007) Channel Reliability in MOSFETs with Gate Oxide Grown using ECR Plasma of O2/He Mrs Proceedings. 989
Jaju V, Dalal V. (2007) Channel reliability in MOSFETs with gate oxide grown using ECR plasma of O2/He Materials Research Society Symposium Proceedings. 989: 101-106
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