Leonard F. Register

Affiliations: 
Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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"Leonard Register"

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Yang-Yu Fan grad student 2002 UT Austin
Wanqiang Chen grad student 2004 UT Austin
Bahniman Ghosh grad student 2007 UT Austin
Xin Zheng grad student 2007 UT Austin
Keng-Ming Liu grad student 2008 UT Austin
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Publications

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Jadaun P, Register LF, Banerjee SK. (2020) Rational design principles for giant spin Hall effect in -transition metal oxides. Proceedings of the National Academy of Sciences of the United States of America
Chen K, Roy A, Rai A, et al. (2017) Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide. Acs Applied Materials & Interfaces
Kang S, Prasad N, Movva HC, et al. (2016) Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters
Majumder S, Guchhait S, Dey R, et al. (2016) Large magnetoresistance at room temperature in ferromagnet/Topological insulator contacts Ieee Transactions On Nanotechnology. 15: 671-674
Valsaraj A, Register LF, Banerjee SK, et al. (2016) Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 230-233
Rai A, Valsaraj A, Movva HC, et al. (2015) Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters
Fallahazad B, Lee K, Kang S, et al. (2015) Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33
Pramanik T, Roy U, Register LF, et al. (2015) Proposal of a Multistate Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet Ieee Transactions On Nanotechnology. 14: 883-888
Hsu W, Mantey J, Register LF, et al. (2015) On the Electrostatic Control of Gate-Normal-Tunneling Field-Effect Transistors Ieee Transactions On Electron Devices
Crum DM, Valsaraj A, Register LF, et al. (2015) Impact of gate oxide complex band structure on n-channel III-V FinFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 250-253
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