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Mark S. Lundstrom

Affiliations: 
Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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Parents

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Richard Schwartz grad student MIT

Children

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Muhammad A. Alam grad student
Christine Marie Maziar grad student 1982-1986
Kausar Banoo grad student 2000 Purdue
Carl R. Huster grad student 2000 Purdue
Zhibin Ren grad student 2001 Purdue
Farzin Assad grad student 2002 Purdue
Jung-Hoon Rhew grad student 2003 Purdue
Ramesh Venugopal grad student 2003 Purdue
Anisur Rahman grad student 2005 Purdue
Sayed Hasan grad student 2006 Purdue
Siyuranga O. Koswatta grad student 2008 Purdue
Himadri S. Pal grad student 2010 Purdue
Ra S. Kim grad student 2011 Purdue
Shuaib Salamat grad student 2011 Purdue
Changwook Jeong grad student 2012 Purdue

Collaborators

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Avik Ghosh collaborator Purdue (Physics Tree)
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Publications

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Hu Y, Feng T, Gu X, et al. (2020) Unification of nonequilibrium molecular dynamics and the mode-resolved phonon Boltzmann equation for thermal transport simulations Physical Review B. 101
Wang X, Lundstrom M. (2019) Limitations of zT as a figure of merit for nanostructured thermoelectric materials Journal of Applied Physics. 126: 195703
Witkoske E, Guzman D, Feng Y, et al. (2019) The use of strain to tailor electronic thermoelectric transport properties: A first principles study of 2H-phase CuAlO2 Journal of Applied Physics. 125: 82531
Witkoske E, Wang X, Maassen J, et al. (2019) Universal behavior of the thermoelectric figure of merit, zT, vs. quality factor Materials Today Physics. 8: 43-48
Wang X, Askarpour V, Maassen J, et al. (2018) On the calculation of Lorenz numbers for complex thermoelectric materials Journal of Applied Physics. 123: 55104
Witkoske E, Wang X, Lundstrom M, et al. (2017) Thermoelectric band engineering: The role of carrier scattering Journal of Applied Physics. 122: 175102
Kaiser J, Feng T, Maassen J, et al. (2017) Thermal transport at the nanoscale: A Fourier's law vs. phonon Boltzmann equation study Journal of Applied Physics. 121: 044302
Bhosale JS, Moore JE, Wang X, et al. (2016) Steady-state photoluminescent excitation characterization of semiconductor carrier recombination. The Review of Scientific Instruments. 87: 013104
Dunn J, Antillon E, Maassen J, et al. (2016) Role of energy distribution in contacts on thermal transport in Si: A molecular dynamics study Journal of Applied Physics. 120: 225112
Kayyalha M, Maassen J, Lundstrom M, et al. (2016) Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2 Journal of Applied Physics. 120
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