Yimin Kang, Ph.D.
Affiliations: | 2003 | University of California, San Diego, La Jolla, CA |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Yimin Kang"Parents
Sign in to add mentor| Paul Kit-Lai Yu | grad student | 2003 | UCSD | |
| (High-performance fused indium gallium arsenide/silicon photodiode.) | ||||
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Publications
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| Na N, Tseng CK, Kang Y, et al. (2014) Rapid-melt-growth-based GeSi waveguide photodetectors and avalanche photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8990 |
| Chen W, Tseng C, Chen K, et al. (2014) Self-Aligned Microbonded Germanium Metal–Semiconductor–Metal Photodetectors Butt-Coupled to Si Waveguides Ieee Journal of Selected Topics in Quantum Electronics. 20: 17-21 |
| Tseng CK, Chen WT, Chen KH, et al. (2013) A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects. Scientific Reports. 3: 3225 |
| Lu Z, Sun W, Hu C, et al. (2011) Ge on Si and InP/InGaAs single photon avalanche diodes Proceedings of Spie. 8155 |
| Lu Z, Kang Y, Hu C, et al. (2011) Geiger-Mode Operation of Ge-on-Si Avalanche Photodiodes Ieee Journal of Quantum Electronics. 47: 731-735 |
| Bowers JE, Dai D, Kang Y, et al. (2010) High-gain high-sensitivity resonant Ge/Si APD photodetectors Proceedings of Spie. 7660 |
| Dai D, Rodwell MJW, Bowers JE, et al. (2010) Derivation of the small signal response and equivalent circuit model for a separate absorption and multiplication layer avalanche photodetector Ieee Journal On Selected Topics in Quantum Electronics. 16: 1328-1336 |
| Bowers JE, Ramaswamy A, Dai D, et al. (2010) Recent advances in Ge/Si PIN and APD photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2526-2531 |
| Dai D, Chen H, Bowers JE, et al. (2010) Equivalent circuit model of a waveguide-type Ge/Si avalanche photodetector Physica Status Solidi (C). 7: 2532-2535 |
| Dai D, Chen HW, Bowers JE, et al. (2009) Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes. Optics Express. 17: 16549-57 |