Ramesh Venugopal, Ph.D.

2003 Purdue University, West Lafayette, IN, United States 
Electronics and Electrical Engineering
"Ramesh Venugopal"


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Mark S. Lundstrom grad student 2003 Purdue
 (Modeling quantum transport in nanoscale transistors.)
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Venugopal R, Chakravarthi S, Chidambaram PR. (2006) Design of CMOS transistors to maximize circuit FOM using a coupled process and mixed-mode simulation methodology Ieee Electron Device Letters. 27: 863-865
Venugopal R, Goasguen S, Datta S, et al. (2004) Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors Journal of Applied Physics. 95: 292-305
Venugopal R, Ren Z, Lundstrom MS. (2003) Simulating quantum transport in nanoscale MOSFETs: ballistic hole transport, subband engineering and boundary conditions Ieee Transactions On Nanotechnology. 2: 135-143
Ren Z, Venugopal R, Goasguen S, et al. (2003) nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs Ieee Transactions On Electron Devices. 50: 1914-1925
Goasguen S, Venugopal R, Lundstrom MS. (2003) Modeling transport in nanoscale silicon and molecular devices on parallel machines Proceedings of the Ieee Conference On Nanotechnology. 1: 398-401
Venugopal R, Paulsson M, Goasguen S, et al. (2003) A simple quantum mechanical treatment of scattering in nanoscale transistors Journal of Applied Physics. 93: 5613-5625
Venugopal R, Ren Z, Datta S, et al. (2002) Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches Journal of Applied Physics. 92: 3730-3739
Svizhenko A, Anantram MP, Govindan TR, et al. (2002) Two-dimensional quantum mechanical modeling of nanotransistors Journal of Applied Physics. 91: 2343-2354
Venugopal R, Rajamani RK. (2001) 3D simulation of charge motion in tumbling mills by the discrete element method Powder Technology. 115: 157-166
Ren Z, Venugopal R, Datta S, et al. (2001) Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation Technical Digest - International Electron Devices Meeting. 107-110
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