Jung-Hoon Rhew, Ph.D.

Affiliations: 
2003 Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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"Jung-Hoon Rhew"

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Mark S. Lundstrom grad student 2003 Purdue
 (Physics and simulation of quasi -ballistic transport in nanoscale transistors.)
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Publications

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Mudanai S, Shih WK, Rios R, et al. (2006) Analytical modeling of output conductance in long-channel halo-doped MOSFETs Ieee Transactions On Electron Devices. 53: 2091-2096
Rhew JH, Lundstrom MS. (2002) Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 92: 5196-5202
Rhew J, Ren Z, Lundstrom MS. (2002) Benchmarking Macroscopic Transport Models for Nanotransistor TCAD Journal of Computational Electronics. 1: 385-388
Rhew JH, Ren Z, Lundstrom MS. (2002) A numerical study of ballistic transport in a nanoscale MOSFET Solid-State Electronics. 46: 1899-1906
Lundstrom M, Rhew JH. (2002) The landauer approach to the critical source-channel barrier in MOSFETs 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 486-489
Banoo K, Rhew J, Lundstrom M, et al. (2001) Simulating Quasi-ballistic Transport in Si Nanotransistors Vlsi Design. 13: 5-13
Rahman A, Ren Z, Rhew JH, et al. (2001) Towards a compact scattering model for nanoscale MOSFETs 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 554-557
Banoo K, Rhew JH, Lundstrom M, et al. (2001) Simulating quasi-ballistic transport in Si nanotransistors Vlsi Design. 13: 5-13
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