Himadri S. Pal, Ph.D.
Affiliations: | 2010 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical Engineering, NanotechnologyGoogle:
"Himadri Pal"Parents
Sign in to add mentor| Mark S. Lundstrom | grad student | 2010 | Purdue | |
| (Device physics studies of III-V and silicon MOSFETs for digital logic.) | ||||
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Publications
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| Pal HS, Nikonov DE, Kim R, et al. (2010) Electron-phonon scattering in planar MOSFETs with NEGF 2010 Silicon Nanoelectronics Workshop, Snw 2010 |
| Liu Y, Pal HS, Lundstrom MS, et al. (2010) Device physics and performance potential of III-V field-effect transistors Fundamentals of Iii-V Semiconductor Mosfets. 31-49 |
| Pal HS, Cantley KD, Ahmed SS, et al. (2008) Influence of bandstructure and channel structure on the inversion layer capacitance of silicon and GaAs MOSFETs Ieee Transactions On Electron Devices. 55: 904-908 |
| Pal HS, Low T, Lundstrom MS. (2008) NEGF analysis of InGaAs schottky barrier double gate MOSFETs Technical Digest - International Electron Devices Meeting, Iedm |
| Yang T, Liu Y, Ye PD, et al. (2008) Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate Applied Physics Letters. 92 |
| Lundstrom MS, Cantley KD, Pal HS. (2007) Nanoscale transistors: Physics and materials Materials Research Society Symposium Proceedings. 958: 185-195 |
| Cantley KD, Liu Y, Pal HS, et al. (2007) Performance analysis of III-V materials in a double-gate nano-MOSFET Technical Digest - International Electron Devices Meeting, Iedm. 113-116 |