Silvanus S. Lau
Affiliations: | Electrical Engineering (Applied Physics) | University of California, San Diego, La Jolla, CA |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Silvanus Lau"
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Publications
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| Zhao Z, Theodore ND, Vemuri RNP, et al. (2013) Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon Journal of Applied Physics. 114 |
| Zhao Z, David Theodore N, Vemuri RNP, et al. (2013) Effective dopant activation via low temperature microwave annealing of ion implanted silicon Applied Physics Letters. 103 |
| Bickford JR, Yu PKL, Lau SS. (2013) Thermal and microwave characterization of GaAs to Si metal-bonded structures Journal of Applied Physics. 114 |
| Doran C, Chen W, Alford TL, et al. (2012) A study of single-crystal silicon diodes integrated on flexible substrates using conductive adhesives Applied Physics Letters. 100 |
| Chen W, Kuech TF, Lau SS. (2011) Ion-cut transfer of InP-based high electron mobility transistors Journal of the Electrochemical Society. 158 |
| Chen W, Doran C, Govea D, et al. (2011) Stress-induced transfer of ultrathin silicon layers onto flexible substrates Electrochemical and Solid-State Letters. 14: H171-H173 |
| Vemuri RNP, Gadre MJ, Theodore ND, et al. (2011) Susceptor assisted microwave annealing for recrystallization and dopant activation of arsenic-implanted silicon Journal of Applied Physics. 110: 34907 |
| Chen W, Alford TL, Kuech TF, et al. (2011) High electron mobility transistors on plastic flexible substrates Applied Physics Letters. 98 |
| Chen W, Chen WV, Lee K, et al. (2010) High quality InP layers transferred by cleavage plane assisted ion-cutting Electrochemical and Solid-State Letters. 13: H268-H270 |
| Chen W, Bandaru P, Tang CW, et al. (2009) InP Layer Transfer with Masked Implantation Electrochemical and Solid-State Letters. 12: H149 |