Jerry L. Hudgins

Affiliations: 
Electrical Engineering The University of Nebraska - Lincoln, Lincoln, NE 
Area:
Electronics and Electrical Engineering
Website:
https://engineering.unl.edu/ece/faculty/jerry-l-hudgins/
Google:
"Jerry Lynn Hudgins" OR "Jerry L Hudgins"
Bio:

https://books.google.com/books?id=QZgvAQAAIAAJ

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Publications

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Gachovska TK, Tian B, Hudgins JL, et al. (2015) A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices Ieee Transactions On Industry Applications. 51: 3361-3367
Santi E, Peng K, Mantooth HA, et al. (2015) Modeling of wide-bandgap power semiconductor devices - Part II Ieee Transactions On Electron Devices. 62: 434-442
Gachovska TK, Radimov N, Gerolami C, et al. (2014) Characterization of GaN switches for solar invertors Ecs Transactions. 64: 273-279
Gachovska TK, Hudgins JL. (2014) Comparison of the forward voltage drop of Si and SiC high voltage diodes Ecs Transactions. 64: 223-236
Tian B, Qiao W, Wang Z, et al. (2014) Monitoring IGBT's health condition via junction temperature variations Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 2550-2555
Gachovska TK, Du B, Hudgins JL, et al. (2013) Transient electro-thermal modeling of bipolar power semiconductor devices Synthesis Lectures On Power Electronics. 6: 1-85
Gachovska TK, Hudgins JL, Santi E, et al. (2013) Modeling bipolar power semiconductor devices gachovska Synthesis Lectures On Power Electronics. 5: 1-95
Parigi F, Gachovska T, Gao Y, et al. (2013) Carbon nano-onion ultracapacitor model Materials Research Society Symposium Proceedings. 1541: 50-55
Gachovska TK, Tian B, Hudgins J, et al. (2013) A real-time thermal model for monitoring of power semiconductor devices 2013 Ieee Energy Conversion Congress and Exposition, Ecce 2013. 2208-2213
Parigi F, Gachovska T, Kim T, et al. (2012) Minimal energy storage system using carbon nanotube and nano-onion ultracapacitors for an electrified bike Proceedings of the Iasted International Conference On Power and Energy Systems, Europes 2012. 147-153
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