Massimo Fischetti

Affiliations: 
Electrical & Computer Engineering University of Massachusetts, Amherst, Amherst, MA 
Area:
Electronics and Electrical Engineering
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"Massimo Fischetti"

Collaborators

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James C. Greer collaborator (Physics Tree)
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Publications

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Khatami MM, Gaddemane G, Van de Put ML, et al. (2019) Electronic Transport Properties of Silicane Determined from First Principles. Materials (Basel, Switzerland). 12
Fischetti M, Narayanan S, O'Regan T, et al. (2019) Electron Transport in Engineered Substrates: Strain, Orientation, and Channel/Insulator Material Effects Ecs Transactions. 3: 33-44
Greene-Diniz G, Fischetti MV, Greer JC. (2016) Erratum: “Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations” [J. Appl. Phys. 119, 055707 (2016)] Journal of Applied Physics. 119: 199901
Greene-Diniz G, Fischetti MV, Greer JC. (2016) Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations Journal of Applied Physics. 119: 055707
Fischetti MV, Kim J, Narayanan S, et al. (2013) Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 473202
Fischetti MV, Aboud SJ, Ong ZY, et al. (2013) Pseudopotential-based study of electron transport in low-dimensionality nanostructures Ecs Transactions. 58: 229-234
Ong ZY, Fischetti MV. (2013) Mobility enhancement and temperature dependence in top-gated single-layer MoS2 Physical Review B - Condensed Matter and Materials Physics. 88
Ong ZY, Fischetti MV. (2013) Theory of remote phonon scattering in top-gated single-layer graphene Physical Review B - Condensed Matter and Materials Physics. 88
Ong ZY, Fischetti MV. (2013) Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene Applied Physics Letters. 102
Fischetti MV. (2012) Post-Si-CMOS devices - Scaling FETs to (Beyond?) 10 nm: From semiclassical to quantum models 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 1-2
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