Yaroslav Koshka
Affiliations: | Electrical and Computer Engineering | Mississippi State University, Starkville, MS, United States |
Area:
Materials Science EngineeringGoogle:
"Yaroslav Koshka"Children
Sign in to add trainee| Igor Sankin | grad student | 2006 | Mississippi State University |
| Huang-De Lin | grad student | 2008 | Mississippi State University |
| Bharat Krishnan | grad student | 2009 | Mississippi State University |
| Hrishikesh Das | grad student | 2010 | Mississippi State University |
| Rooban V. Kulandaivelu Govindarajulu Thirumalai | grad student | 2013 | Mississippi State University |
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Publications
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| Thirumalai RVKG, Krishnan B, Davydov A, et al. (2013) Vapor-phase catalyst delivery method for growing SiC nanowires Materials Science Forum. 740: 209-212 |
| Melnychuk G, Kotamraju SP, Koshka Y. (2013) Role of Cl/Si ratio in the low-temperature chloro-carbon epitaxial growth of SiC Materials Science Forum. 740: 205-208 |
| Williams EH, Schreifels JA, Rao MV, et al. (2013) Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications Journal of Materials Research. 28: 68-77 |
| Thirumalai RVKG, Krishnan B, Davydov AV, et al. (2013) SiC nanowire vapor-liquid-solid growth using vapor-phase catalyst delivery Journal of Materials Research. 28: 50-56 |
| Koshka Y, Thirumalai RVKG, Krishnan BK, et al. (2013) Orientation, alignment, and polytype control in epitaxial growth of SiC nanowires for electronics application in harsh environments Proceedings of Spie - the International Society For Optical Engineering. 8820 |
| Karacolak T, Thirumalai RVKG, Merrett JN, et al. (2013) Silicon carbide (SiC) antennas for high-temperature and high-power applications Ieee Antennas and Wireless Propagation Letters. 12: 409-412 |
| Pedersen H, Leone S, Kordina O, et al. (2012) Chloride-based CVD growth of silicon carbide for electronic applications. Chemical Reviews. 112: 2434-53 |
| Krishnan B, Thirumalai RVKG, Kotamraju S, et al. (2012) Use of vanadium doping for compensated and semi-insulating SiC epitaxial layers for SiC device applications Materials Science Forum. 717: 133-136 |
| Kotamraju S, Krishnan B, Beyer FC, et al. (2012) Electrical and optical properties of high-purity epilayers grown by the low-temperature chloro-carbon growth method Materials Science Forum. 717: 129-132 |
| Thirumalai RVKG, Krishnan B, Levin I, et al. (2012) Growth of SiC nanowires on different planes of 4H-SiC substrates Materials Science Forum. 717: 1279-1282 |