Jiseok Kim, Ph.D.
Affiliations: | 2011 | Electrical & Computer Engineering | University of Massachusetts, Amherst, Amherst, MA |
Area:
Electronics and Electrical Engineering, General Physics, Quantum PhysicsGoogle:
"Jiseok Kim"Parents
Sign in to add mentor| Massimo Fischetti | grad student | 2011 | U Mass Amherst | |
| (Band structure calculations of strained semiconductors using empirical pseudopotential theory.) | ||||
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Publications
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| Fischetti MV, Kim J, Narayanan S, et al. (2013) Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 473202 |
| Fischetti MV, Aboud SJ, Ong ZY, et al. (2013) Pseudopotential-based study of electron transport in low-dimensionality nanostructures Ecs Transactions. 58: 229-234 |
| Kim J, Fischetti MV, Aboud S. (2012) Structural, electronic, and transport properties of silicane nanoribbons Physical Review B. 86 |
| Kim J, Krishnan SA, Narayanan S, et al. (2012) Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs Microelectronics Reliability. 52: 2907-2913 |
| Kim J, Fischetti MV. (2011) Empirical pseudopotential calculations of the band structure and ballistic conductance of strained [001], [110], and [111] silicon nanowires Journal of Applied Physics. 110: 033716 |
| Kim J, Fischetti MV. (2010) Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors Journal of Applied Physics. 108: 013710 |
| Fischetti MV, O'Regan TP, Narayanan S, et al. (2007) Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length Ieee Transactions On Electron Devices. 54: 2116-2136 |
| Zhang Y, Kim J, Fischetti MV. (2007) Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers Journal of Computational Electronics. 7: 176-180 |