Isaac H. Wildeson, Ph.D.

Affiliations: 
2011 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Nanotechnology, Electronics and Electrical Engineering, Materials Science Engineering
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Timothy D. Sands grad student 2011 Purdue
 (Selective-area nanoheteroepitaxy for light emitting diode (LED) applications.)
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Publications

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Liang Z, Wildeson IH, Colby R, et al. (2011) Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9
Wildeson IH, Ewoldt DA, Colby R, et al. (2011) Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40
Colby R, Liang Z, Wildeson IH, et al. (2010) Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73
Liang Z, Colby R, Wildeson IH, et al. (2010) GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108
Oliver MH, Schroeder JL, Ewoldt DA, et al. (2008) Organometallic vapor phase epitaxial growth of GaN on ZrNAlNSi substrates Applied Physics Letters. 93
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