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David A. Ewoldt, Ph.D.

Affiliations: 
2011 Materials Engineering Purdue University, West Lafayette, IN, United States 
Area:
Materials Science Engineering
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"David Ewoldt"
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Timothy D. Sands grad student 2011 Purdue
 (Effect of strain on indium incorporation in heteroepitaxial (indium, gallium) nitride nanomaterials.)

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Ng TB, Ewoldt DA, Shepherd DA, et al. (2015) Reflectance analysis on the MOCVD growth of AlN on Si(111) by the virtual interface model Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 385-388
Chung G, Loboda MJ, Carlson E, et al. (2015) Investigation of stress, defect structure and electrical conduction in large diameter III-nitride epitaxy on silicon substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 418-422
Schroeder JL, Ewoldt DA, Amatya R, et al. (2014) Bulk-like laminated nitride Metal/Semiconductor superlattices for thermoelectric devices Journal of Microelectromechanical Systems. 23: 672-680
Liang Z, Wildeson IH, Colby R, et al. (2011) Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9
Wildeson IH, Ewoldt DA, Colby R, et al. (2011) Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40
Colby R, Liang Z, Wildeson IH, et al. (2010) Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73
Liang Z, Colby R, Wildeson IH, et al. (2010) Publisher's Note: “GaN nanostructure design for optimal dislocation filtering” [J. Appl. Phys. 108, 074313 (2010)] Journal of Applied Physics. 108: 109901
Liang Z, Colby R, Wildeson IH, et al. (2010) GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108
Wildeson IH, Colby R, Ewoldt DA, et al. (2010) Publisher's Note: “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy” [J. Appl. Phys. 108, 044303 (2010)] Journal of Applied Physics. 108: 079907
Wildeson IH, Colby R, Ewoldt DA, et al. (2010) III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy Journal of Applied Physics. 108
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