David M. Keogh, Ph.D.
Affiliations: | 2006 | University of California, San Diego, La Jolla, CA |
Area:
Electronics and Electrical EngineeringGoogle:
"David Keogh"Parents
Sign in to add mentor| Peter M. Asbeck | grad student | 2006 | UCSD | |
| (Design and fabrication of indium gallium nitride/gallium nitride heterojunction bipolar transistors for microwave power amplifiers.) | ||||
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Publications
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| Chung T, Keogh DM, Ryou JH, et al. (2007) High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition Journal of Crystal Growth. 298: 852-856 |
| Chu-Kung BF, Feng M, Walter G, et al. (2006) Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors Applied Physics Letters. 89 |
| Chung T, Limb J, Yoo D, et al. (2006) Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design Applied Physics Letters. 88 |
| Keogh DM, Asbeck PM, Chung T, et al. (2006) High current gain InGaN/GaN HBTs with 300/spl deg/C operating temperature Electronics Letters. 42: 661-663 |
| Keogh DM, Asbeck PM, Chung T, et al. (2006) High current gain InGaN/GaN HBTs with 300°C operating temperature Electronics Letters. 42: 661-663 |
| Keogh D, Asbeck P, Chung T, et al. (2006) Digital etching of III-N materials using a two-step Ar/KOH technique Journal of Electronic Materials. 35: 771-776 |
| Chung T, Limb J, Ryou JH, et al. (2006) Growth of InGaN HBTs by MOCVD Journal of Electronic Materials. 35: 695-700 |
| Keogh DM, Dupuis RD, Feng M, et al. (2005) Improvement of III-N surfaces after inductively coupled plasma dry etch exposure Proceedings - Electrochemical Society. 354-360 |
| Keogh DM, Li JC, Conway AM, et al. (2004) Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers International Journal of High Speed Electronics and Systems. 14: 831-836 |
| Li JC, Keogh DM, Raychaudhuri S, et al. (2004) Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs International Journal of High Speed Electronics and Systems. 14: 825-830 |