Alexander Grekov, Ph.D.
Affiliations: | 2005 | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical EngineeringGoogle:
"Alexander Grekov"Parents
Sign in to add mentorTangali S. Sudarshan | grad student | 2005 | University of South Carolina | |
(Investigation of diffused silicon carbide p-i-n diode for high power applications.) |
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Publications
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Fu R, Grekov A, Hudgins J, et al. (2012) Power SiC DMOSFET model accounting for nonuniform current distribution in JFET region Ieee Transactions On Industry Applications. 48: 181-190 |
Grekov A, Zhang Q, Fatima H, et al. (2008) Effect of crystallographic defects on the reverse performance of 4H-SiC JBS diodes Microelectronics Reliability. 48: 1664-1668 |
Bolotnikov AV, Muzykov PG, Grekov AE, et al. (2007) Improvement of 4H-SiC power p-i-n diode switching performance through local lifetime control using boron diffusion Ieee Transactions On Electron Devices. 54: 1540-1544 |
Grekov A, Maximenko S, Sudarshan TS. (2005) Effect of basal plane dislocations on characteristics of difused 4H-SiC p-i-n diodes Ieee Transactions On Electron Devices. 52: 2546-2551 |
Maximenko S, Soloviev S, Grekov A, et al. (2005) Study of forward voltage drift in diffused SiC PIN diodes doped by Al or B Materials Science Forum. 483: 989-992 |
Soloviev S, Cherednichenko D, Gao Y, et al. (2004) Forward voltage drop degradation in diffused SiC p-i-n diodes Journal of Applied Physics. 95: 4376-4380 |
Grekov A, Soloviev S, Das T, et al. (2003) Electrical characterization of Ni/porous SiC/n-SiC structure Materials Science Forum. 433: 419-422 |