Tawhid A. Rana, Ph.D.
Affiliations: | 2013 | Electrical Engineering | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical EngineeringGoogle:
"Tawhid Rana"Parents
Sign in to add mentor| Tangali S. Sudarshan | grad student | 2013 | University of South Carolina | |
| (High quality silicon carbide epitaxial growth by novel fluorosilane gas chemistry for next generation high power electronics.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Rana T, Chung GY, Anderson S, et al. (2019) Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy Materials Science Forum. 963: 119-122 |
| Rana T, Chandrashekhar MVS, Daniels K, et al. (2016) SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF |
| Rana T, Chandrashekhar MVS, Daniels K, et al. (2015) Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient Japanese Journal of Applied Physics. 54 |
| Omar SU, Sudarshan TS, Rana TA, et al. (2014) Interface Trap-Induced Nonideality in As-Deposited Ni/4H-SiC Schottky Barrier Diode Ieee Transactions On Electron Devices |
| Omar SU, Sudarshan TS, Rana TA, et al. (2014) Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: Testing the limits of Tung's model Journal of Physics D: Applied Physics. 47 |
| Sudarshan TS, Rana T, Song H, et al. (2013) Trade-off between parasitic deposition and SiC homoepitaxial growth rate using halogenated Si-precursors Ecs Journal of Solid State Science and Technology. 2 |
| Omar SU, Chandrashekhar MVS, Chowdhury IA, et al. (2013) Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor Journal of Applied Physics. 113 |
| Rana T, Chandrashekhar MVS, Sudarshan TS. (2013) Vapor phase surface preparation (etching) of 4H-SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy Journal of Crystal Growth. 380: 61-67 |
| Rana T, Song H, Chandrashekhar MVS, et al. (2012) Behavior of particles in the growth reactor and their effect on silicon carbide epitaxial growth Materials Science Forum. 717: 153-156 |
| Song H, Omar SU, Rana T, et al. (2012) In-grown stacking faults in SiC-CVD using dichlorosilane and propane as precursors Materials Science Forum. 717: 121-124 |