Muhammad A. Alam

Affiliations: 
Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Biomedical Engineering
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"Muhammad Alam"

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Haldun Kufluoglu grad student 2007 Purdue
Nauman Z. Butt grad student 2008 Purdue
Oguz H. Elibol grad student 2008 Purdue
Ninad V. Pimparkar grad student 2008 Purdue
Dhanoop Varghese grad student 2009 Purdue
Ahmad E. Islam grad student 2010 Purdue
Jonghyun Go grad student 2012 Purdue
Biswajit Ray grad student 2013 Purdue
Ravi P. Vedula grad student 2013 Purdue
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Publications

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Jin X, Bandodkar AJ, Fratus M, et al. (2020) Modeling, design guidelines, and detection limits of self-powered enzymatic biofuel cell-based sensors. Biosensors & Bioelectronics. 168: 112493
Karda K, Mouli C, Alam MA. (2020) Design Principles of Self-Compensated NBTI-Free Negative Capacitor FinFET Ieee Transactions On Electron Devices. 67: 2238-2242
Ahn W, Cornigli D, Varghese D, et al. (2020) Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation Ieee Transactions On Components, Packaging and Manufacturing Technology. 1-1
Ahn W, Zhang H, Shen T, et al. (2020) A Closed-Form Transient Joule Heating Model for an Interconnect in an Integrated Circuit Ieee Electron Device Letters. 41: 288-291
Asadpour R, Sulas-Kern DB, Johnston S, et al. (2020) Dark Lock-in Thermography Identifies Solder Bond Failure as the Root Cause of Series Resistance Increase in Fielded Solar Modules Ieee Journal of Photovoltaics. 10: 1409-1416
Song E, Chiang CH, Li R, et al. (2019) Flexible electronic/optoelectronic microsystems with scalable designs for chronic biointegration. Proceedings of the National Academy of Sciences of the United States of America
Islam AE, Mahapatra S, Deora S, et al. (2019) Essential aspects of Negative Bias Temperature Instability (NBTI) Ecs Transactions. 35: 145-174
Alam MA, Mahajan BK, Chen Y, et al. (2019) A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review Ieee Transactions On Electron Devices. 66: 4556-4565
Kim S, Song JD, Alam MA, et al. (2019) Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs Ieee Journal of the Electron Devices Society. 7: 869-877
Mahajan BK, Chen Y, Noh J, et al. (2019) Electrothermal performance limit of β-Ga2O3 field-effect transistors Applied Physics Letters. 115: 173508
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