Khairul Alam, Ph.D.
Affiliations: | 2006 | University of California, Riverside, Riverside, CA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Khairul Alam"Parents
Sign in to add mentorRoger K. Lake | grad student | 2006 | UC Riverside | |
(Quantum theory, modeling, analysis, and design of carbon nanotube field effect transistors.) |
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Publications
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Alam K. (2020) Physical insight and performance metrics of monolayer MX2 heterojunction TFETs Micro & Nano Letters. 15: 81-85 |
Alam K. (2017) Orientation Engineering for Improved Performance of a Ge-Si Heterojunction Nanowire TFET Ieee Transactions On Electron Devices. 64: 4850-4855 |
Sylvia SS, Alam K, Lake RK. (2016) Uniform Benchmarking of Low-Voltage van der Waals FETs Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 28-35 |
Mondol K, Hasan MM, Arafath Y, et al. (2016) Quantization effects on the inversion mode of a double gate MOS Results in Physics. 6: 339-341 |
Sylvia SS, Habib KMM, Khayer MA, et al. (2014) Effect of random, discrete source dopant distributions on nanowire tunnel FETs Ieee Transactions On Electron Devices. 61: 2208-2214 |
Alam K, Takagi S, Takenaka M. (2013) Analysis and Comparison of L-Valley Transport in GaAs, GaSb, and Ge Ultrathin-Body Ballistic nMOSFETs Ieee Transactions On Electron Devices. 60: 4213-4218 |
Alam K, Abdullah MA. (2012) Effects of Dielectric Constant on the Performance of a Gate All Around InAs Nanowire Transistor Ieee Transactions On Nanotechnology. 11: 82-87 |
Alam K, Lake RK. (2012) Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map Ieee Transactions On Electron Devices. 59: 3250-3254 |
Sylvia SS, Khayer MA, Alam K, et al. (2012) Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel Transistors Ieee Transactions On Electron Devices. 59: 2996-3001 |
Sylvia SS, Park H, Khayer MA, et al. (2012) Material Selection for Minimizing Direct Tunneling in Nanowire Transistors Ieee Transactions On Electron Devices. 59: 2064-2069 |