Nauman Z. Butt, Ph.D.

Affiliations: 
2008 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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"Nauman Butt"

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Muhammad A. Alam grad student 2008 Purdue
 (Computational study of scaling and radiation effects in nanoscale memory devices.)
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Publications

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Qasim UB, Imran H, Kamran M, et al. (2020) Computational study of stack/terminal topologies for perovskite based bifacial tandem solar cells Solar Energy. 203: 1-9
Younas R, Imran H, Shah SIH, et al. (2019) Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar Cells Ieee Transactions On Electron Devices. 66: 1819-1826
Ullah H, Imran H, Butt NZ. (2018) Modeling of TiO 2 -Based Electron-Selective Contacts for Crystalline Silicon Solar Cells Ieee Transactions On Electron Devices. 65: 4421-4428
Imran H, Durrani I, Kamran M, et al. (2018) High-Performance Bifacial Perovskite/Silicon Double-Tandem Solar Cell Ieee Journal of Photovoltaics. 8: 1222-1229
Imran H, Abdolkader TM, Butt NZ. (2016) Carrier-Selective NiO/Si and TiO 2 /Si Contacts for Silicon Heterojunction Solar Cells Ieee Transactions On Electron Devices. 63: 3584-3590
Saad R, Butt NZ. (2016) Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells Ieee Journal of Photovoltaics. 6: 1488-1493
Butt NZ, Sarker BK, Chen YP, et al. (2015) Substrate-Induced Photofield Effect in Graphene Phototransistors Ieee Transactions On Electron Devices. 62: 3734-3741
Imran H, Butt NZ. (2015) Computational Study of Hybrid Nanomaterial/Insulator/Silicon Solar Cells Ieee Transactions On Electron Devices. 62: 3111-3116
Butt NZ, Johnson JB. (2012) Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation Ieee Electron Device Letters. 33: 1099-1101
Butt NZ, Yoder PD, Alam MA. (2007) Soft Error Trends and New Physical Model for Ionizing Dose Effects in Double Gate Z-RAM Cell Ieee Transactions On Nuclear Science. 54: 2363-2370
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