Nauman Z. Butt, Ph.D.
Affiliations: | 2008 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Nauman Butt"Parents
Sign in to add mentor| Muhammad A. Alam | grad student | 2008 | Purdue | |
| (Computational study of scaling and radiation effects in nanoscale memory devices.) | ||||
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Publications
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| Qasim UB, Imran H, Kamran M, et al. (2020) Computational study of stack/terminal topologies for perovskite based bifacial tandem solar cells Solar Energy. 203: 1-9 |
| Younas R, Imran H, Shah SIH, et al. (2019) Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar Cells Ieee Transactions On Electron Devices. 66: 1819-1826 |
| Ullah H, Imran H, Butt NZ. (2018) Modeling of TiO 2 -Based Electron-Selective Contacts for Crystalline Silicon Solar Cells Ieee Transactions On Electron Devices. 65: 4421-4428 |
| Imran H, Durrani I, Kamran M, et al. (2018) High-Performance Bifacial Perovskite/Silicon Double-Tandem Solar Cell Ieee Journal of Photovoltaics. 8: 1222-1229 |
| Imran H, Abdolkader TM, Butt NZ. (2016) Carrier-Selective NiO/Si and TiO 2 /Si Contacts for Silicon Heterojunction Solar Cells Ieee Transactions On Electron Devices. 63: 3584-3590 |
| Saad R, Butt NZ. (2016) Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells Ieee Journal of Photovoltaics. 6: 1488-1493 |
| Butt NZ, Sarker BK, Chen YP, et al. (2015) Substrate-Induced Photofield Effect in Graphene Phototransistors Ieee Transactions On Electron Devices. 62: 3734-3741 |
| Imran H, Butt NZ. (2015) Computational Study of Hybrid Nanomaterial/Insulator/Silicon Solar Cells Ieee Transactions On Electron Devices. 62: 3111-3116 |
| Butt NZ, Johnson JB. (2012) Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation Ieee Electron Device Letters. 33: 1099-1101 |
| Butt NZ, Yoder PD, Alam MA. (2007) Soft Error Trends and New Physical Model for Ionizing Dose Effects in Double Gate Z-RAM Cell Ieee Transactions On Nuclear Science. 54: 2363-2370 |