Dhanoop Varghese, Ph.D.
Affiliations: | 2009 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Dhanoop Varghese"Parents
Sign in to add mentor| Muhammad A. Alam | grad student | 2009 | Purdue | |
| (Multi-probe experimental and 'bottom-up' computational analysis of correlated defect generation in modern nanoscale transistors.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Ahn W, Cornigli D, Varghese D, et al. (2020) Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation Ieee Transactions On Components, Packaging and Manufacturing Technology. 1-1 |
| Cornigli D, Reggiani S, Gnudi A, et al. (2018) Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents Ieee Transactions On Dielectrics and Electrical Insulation. 25: 2421-2428 |
| Cornigli D, Reggiani S, Gnudi A, et al. (2018) Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture Microelectronics Reliability. 752-755 |
| Imperiale I, Reggiani S, Pavarese G, et al. (2017) Role of the Insulating Fillers in the Encapsulation Material on the Lateral Charge Spreading in HV-ICs Ieee Transactions On Electron Devices. 64: 1209-1216 |
| Palit S, Varghese D, Guo H, et al. (2015) The Role of Dielectric Heating and Effects of Ambient Humidity in the Electrical Breakdown of Polymer Dielectrics Ieee Transactions On Device and Materials Reliability. 15: 308-318 |
| Masuduzzaman M, Varghese D, Rodriguez JA, et al. (2014) Observation and control of hot atom damage in ferroelectric devices Ieee Transactions On Electron Devices. 61: 3490-3498 |
| Varghese D, Reddy V, Krishnan S, et al. (2014) OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review Microelectronics Reliability. 54: 1477-1488 |
| Masuduzzaman M, Xie S, Chung J, et al. (2012) The origin of broad distribution of breakdown times in polycrystalline thin film dielectrics Applied Physics Letters. 101 |
| Masuduzzaman M, Varghese D, Guo H, et al. (2011) The origin and consequences of push-pull breakdown in series connected dielectrics Applied Physics Letters. 99 |
| Satter MM, Islam AE, Varghese D, et al. (2011) A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates Solid-State Electronics. 56: 141-147 |