Ravi P. Vedula, Ph.D.
Affiliations: | 2013 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Ravi Vedula"Parents
Sign in to add mentorMuhammad A. Alam | grad student | 2013 | Purdue | |
(Predictive atomistic simulations of electronic properties of realistic nanoscale devices: A multiscale modeling approach.) | ||||
Alejandro H. Strachan | grad student | 2013 | Purdue |
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Publications
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Vedula RP, Mehrotra S, Kubis T, et al. (2015) Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)] Journal of Applied Physics. 118: 019901 |
Vedula RP, Mehrotra S, Kubis T, et al. (2015) Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations Journal of Applied Physics. 117 |
Anderson NL, Vedula RP, Strachan A. (2015) Model form uncertainty versus intrinsic atomic variability in amorphous silicon oxides and nitrides Computational Materials Science. 109: 124-128 |
Vedula RP, Palit S, Alam MA, et al. (2013) Role of atomic variability in dielectric charging: A first-principles-based multiscale modeling study Physical Review B - Condensed Matter and Materials Physics. 88 |
Vedula RP, Anderson NL, Strachan A. (2012) Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study Physical Review B - Condensed Matter and Materials Physics. 85 |
Anderson NL, Vedula RP, Schultz PA, et al. (2011) First-principles investigation of low energy E' center precursors in amorphous silica. Physical Review Letters. 106: 206402 |
Anderson NL, Vedula RP, Schultz PA, et al. (2011) First-principles investigation of low energy E′ center precursors in amorphous silica Physical Review Letters. 106 |