Guanxiong Liu, Ph.D.
Affiliations: | 2012 | Electrical Engineering | University of California, Riverside, Riverside, CA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Guanxiong Liu"Parents
Sign in to add mentorAlexander A. Balandin | grad student | 2012 | UC Riverside | |
(Graphene Device Fabrication and Applications in Communication Systems.) |
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Publications
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Liu G, Rumyantsev S, Bloodgood MA, et al. (2018) Low-Frequency Current Fluctuations and Sliding of the Charge Density Waves in Two-Dimensional Materials. Nano Letters |
Geremew A, Bloodgood MA, Aytan E, et al. (2018) Current Carrying Capacity of Quasi-1D ZrTe3Van Der Waals Nanoribbons Ieee Electron Device Letters. 39: 735-738 |
Liu G, Rumyantsev S, Bloodgood MA, et al. (2017) Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires. Nano Letters. 17: 377-383 |
Khitun A, Liu G, Balandin AA. (2017) Two-Dimensional Oscillatory Neural Network Based on Room-Temperature Charge-Density-Wave Devices Ieee Transactions On Nanotechnology. 16: 860-867 |
Liu G, Zhang EX, Liang CD, et al. (2017) Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices Ieee Electron Device Letters. 38: 1724-1727 |
Balynsky M, Kozhevnikov A, Khivintsev Y, et al. (2017) Magnonic interferometric switch for multi-valued logic circuits Journal of Applied Physics. 121: 024504 |
Gutierrez D, Chiang H, Bhowmick T, et al. (2017) Magnonic holographic imaging of magnetic microstructures Journal of Magnetism and Magnetic Materials. 428: 348-356 |
Stolyarov MA, Liu G, Bloodgood MA, et al. (2016) Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications. Nanoscale |
Liu G, Debnath B, Pope TR, et al. (2016) A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature. Nature Nanotechnology |
Politano A, Chiarello G, Samnakay R, et al. (2016) The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices. Nanoscale |